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Q0565 74HCT16 15KPA 4N37W YT2604 HVU350B 4E3MXXXF STD3NB50
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  Datasheet File OCR Text:
 SMD Type
Power Transistor 2SB1443
Transistors IC
Features
Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. Excellent DC current gain characteristics.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature *1 Single pulse Pw=10ms. *2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. Symbol VCBO VCEO VEBO IC ICP *1 PC*2 Tj Tstg Rating -50 -50 -6 -2 -5 1 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltae Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Output capacitance Transition frequency Symbol VCBO VCEO VEBO IcBO IEBO hFE IC= -50iA IC= -1mA IE= -50iA VCB= -50V VEB= -5V VCE=-2V, IC= -0.5A 120 Testconditons Min -50 -50 -6 -0.1 -0.1 270 -0.15 -0.35 36 200 V pF MHz Typ Max Unit V V V A A
VCE(sat) IC/IB= -1A/ -50mA Cob fT VCB= -10V, IE=0A, f=1MHz VCE= -2V, IE=0.5A, f=100MHz
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